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A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin–photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin–photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum microchiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ∼7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way toward building large-scale quantum repeaters.

We show enhanced single-photon emission from artificial atoms in silicon by coupling them to cavities with high quality factors and small mode volumes, thus enabling enhanced light-matter interactions which are crucial for quantum technologies.

We present an efficient microwave and optical interface for quantum memories at 1.3 K based on tin-vacancy color centers in diamond and scalable integrated photonics.